BLACK MAGIC PRO

Wafer-scale Deposition of Carbon Nanotubes and Graphene BM Pro · 4/6/12 inch Features Fast response heater, up to 300 °C/minute ramp rates Thermal CVD Plasma enhanced CVD Excellent reproducibility Closed loop infrared wafer temperature control Advanced Design Plasma with frequency and duty cycle control Optimized geometry for uniformity Control Automatic process control Easy recipe editing […]

Black Magic 2″ – R&D

Applying this methodology, the deposition of thin films takes place by means of chemical reactions, in which the wafers are exposed to a gas mixture that reacts on the wafer surface. The process can also be plasma-enhanced

MOCVD – Planetary Reactor

The Planetary Reactor is based on the principle of a horizontal laminar flow reactor. The laminar flow principle ensures extremely precise transitions between different materials, and an unparalleled control over the deposition rates for films that are only a few atoms thick

QXP-8300 NVM

The Highest Deposition Rate with Excellent Composition Control and Conformality

QXP-8300 ALD System

Atomic layer deposition is a process for manufacturing ultrathin films for semiconductor components and future non-semiconductor applications

QXP-8300 ALD System

Deposition systems for logic and memory Technologies


QXP-8300 ALD System

Product Features

  • Simultaneous processing of 8 wafers in two ALD chambers with excellent station to station uniformity
  • Up to 4 precursor sources: combination of patented TriJet® vaporizers and bubblers
  • Isolated multi wafer processing with Close Coupled Showerhead® for efficient & uniform distribution of precursors and gases in short cycle time
  • >12,000 wafers run per chamber between wet clean or preventive maintenance
  • Applications: DRAM, Flash and Logic High k Dielectric and Metal
  • Over 80 chambers in High Volume Manufacturing (HVM) running over 300,000 wafers per month

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Benefits

  • Mini-batch 300 mm system
  • High throughput: 2 process chambers – 8 stations
  • Low running cost: >$1M savings per year for 80 K wafers start per month
  • Proven in HVM with >40 % lower CoO and >90 % uptime in semiconductor fabs
  • Oxide and nitride films with >95 % step coverage in 100:1 AR structures at 1x nm device and beyond

PECVD direct loading system Depolab 200

The PECVD system Depolab 200 combines cost effective direct loading and parallel plate plasma source in a basic, compact design. The easy to use direct loading system enables user-friendly batch processing (with carrier or direct loading onto the substrate electrode). The clever PECVD system can be upgraded for enhanced performance on demand

PECVD loadlock system SI 500 PPD

The flexible PECVD system SI 500 PPD features a variety of standard plasma deposition processes. SiO2, SiNx, SiOxNy, and a-Si are deposited with capacitively coupled plasma.