MOCVD
Planetary Reactor
The Planetary Reactor is based on the principle of a horizontal laminar flow reactor.
The laminar flow principle ensures extremely precise transitions between different materials, and an unparalleled control over the deposition rates for films that are only a few atoms thick.
G5+ for GaN on 200 mm Si
AIX G5+ characteristics
- Unique axis symmetric wafer performance like Si single wafer reactor
- Wafer bow
- Thickness, composition, concentration
- Device yield
- Warm ceiling results in lowest heat flux through wafer
- Smallest wafer bow by vertical temperature gradient
- Enabling standard Si wafer thickness
- Customized temperature optimization by recess shaping
AIX 2800G4-TM
