Atomic Layer Deposition Systems

PEALD for sensitive substrates

The true remote plasma source enables homogenous and conformal coating of sensitive substrates and layers at low temperature <100°C. A high flux of reactive gas species is provided at the sample surface without UV radiation or ion bombardment.

In situ diagnostics for process development and optimization

In situ diagnostic by the ALD Real Time Monitor enables ultra-high resolution of single ALD cycles. The advantages are confirmation of ALD regime, reduction of process time, and total cost of ownership. Spectroscopic ellipsometry, QCM and QMS are provided as in situ diagnostic, are advantages of our atomic layer depostion systems too.

Easy reactor cleaning

Regular reactor cleaning is essential for stable and repeatable atomic layer deposition processing. The reactor chamber is easily opened with the help of a lifting device for cleaning of our atomic layer deposition systems.

Glove box system integration

SENTECH atomic layer deposition systems are compatible with glove boxes of various suppliers.

Cluster integration

Atomic layer deposition systems are available as modules for SENTECH clusters. Our atomic layer deposition systems can be combined with SENTECH PECVD and etching systems for industrial application. Clusters optionally feature cassette-to-cassette loading.

SENTECH atomic layer deposition systems enable thermal and plasma enhanced operation. The ALD systems can be configured for oxide, nitride, and metal deposition. 3D structures can be homogenously and conformally coated. With ALD, PECVD and ICPECVD, SENTECH offers plasma deposition technology for depositing films from the nanometer scale up to several microns.

SENTECH ALD systems allow the combination of different thermal and/or plasma enhanced ALD films to multilayer structures. Thermal and plasma enhanced atomic layer deposition is supported in one reactor with an optimal shutter.

SENTECH offers leading edge ultra-fast in-situ monitoring of layer-by-layer film growth using the ALD Real Time Monitor as well as wide range spectroscopic ellipsometry.

ALD Real Time Monitor

Efficient process development and optimization ALD Real Time Monitor

ALD processes are quickly and easily developed and optimized using single ALD cycles. The ALD Real Time Monitor reveals adsorption and desorption with ultra-high, 40ms time resolution. Developing time, substrates, precursors, and gasses are saved.

Saving precursor

ALD processing becomes more efficient after optimization with the ALD Real Time Monitor. Precursor and processing time is saved.

Precursor control

When the precursor supply is running out, this is immediately indicated by a change in growth per cycle detected by the ALD Real Time Monitor.

The SENTECH ALD Real Time Monitor is a novel optical diagnostic tool allowing ultra-high resolution of single ALD cycles. Analysing of film properties (growth rate, thickness, refractive index) without breaking the vacuum, developing new processes in short time, and studying reaction mechanisms during ALD cycles in real time are main applications of SENTECH ALD Real Time Monitor.

The innovative ALD Real Time Monitor is especially designed for fast and efficient process development and optimization with SENTECH Atomic layer deposition systems. One software enables easy operation of SENTECH ALD systems and ALD Real Time Monitor. The ALD Real Time Monitor is fully integrated into SENTECH ALD systems software ensuring easy operation.

SI ALD LL

Features: 1425996548_5431__6

  • Loadlock
  • Optional true remote plasma source
  • Low temperature processing using plasma enhanced ALD
  • Lifting device for opening reactor
SI ALD

Features:

  • 1425996754_8893__6Manual loading
  • Optional true remote plasma source
  • Low temperature processing using plasma enhanced ALD
  • Lifting device for opening reactor