ICP-RIE plasma etcher SI 500
The high end plasma etching system SI 500 uses an inductively coupled plasma with low ion energy for low damage etching and nano structuring. Repeatable and stable plasma etching conditions are ensured by dynamic temperature control over a wide temperature range. Cryogenic and room temperature, gas chopping processes are applied for deep reactive plasma etching (Si, III-V semiconductors, MEMS)
RIE plasma etcher SI 591 compact
With the SI 591 compact, a variety of chlorine and fluorine based plasma etching processes can be performed reproducibly with a vacuum load lock and fully computer controlled processing. The SI 591 compact is characterized by a small footprint and flexible design for RIE plasma etching, e.g. the SI 591 compact can be integrated into a cluster system.