MOCVD

Close Coupled Showerhead

Applying this technology, the process gases are introduced vertically over the entire coating surface in the reactor via the water-cooled showerhead surface.

The gas flow into the reactor is designed in such a manner that the Group III and Group V gases are separated until they enter the reactor (by many small narrow tubes at the showerhead inlet).

This technology ensures an unmatched level of reproducibility.

AIX R6

The new Close Coupled Showerhead MOCVD system fulfi lls your requirements for LED mass manufacturing. Equipped with numerous technical innovations the system enhances your competitiveness.

AIX R6 – 6 commitments to customer performance

  • Framework for LED production
  • Systematically lowest Cost of Ownership
  • Large reactor capacity 121×2 inch, 31×4 inch and 12×6 inch
  • Maximized throughput
    • Automation
    • Continuous runs
    • Reliability and uptime
  • Intrinsic yield and uniformity
  • Focus on user friendliness
CRIUS II-XL

Increase your productivity and performance

Take advantage of

  • Highest throughput per footprint
  • Seamless process scale-up
  • Lowest cost of ownership
  • Continuous production: no internal bake
  • Reduced process cycle time
  • Highest yield

Improved Design Features

  • Fast susceptor handling
  • No internal bake
  • Dynamic gap adjustment
  • ARGUS in-situ temperature control

Benefits

  • High growth rates
  • High growth pressure
  • Zero particle generation
  • Minimized maintenance

Optional

  • In situ measuring tools for analysis of surface temperature, curvature and growth rate of wafers
CRIUS II-L

Increase your productivity and performance

Take advantage of

  • Highest throughput per footprint
  • Seamless scale-up process
  • Lowest cost of ownership
  • Capacity: 69×2, 16×4, 7×6, 3×8 inch
  • Continuous production: no internal bake
  • Reduced process cycle time
  • Highest yield

Improved Design Features

  • Fast susceptor handling
  • No internal bake
  • Dynamic gap adjustment
  • ARGUS in-situ temperature control

Benefits

  • High growth rates
  • High growth pressure
  • Zero particle generation
  • Minimized maintenance

Optional

  • In situ measuring tools for analysis of surface temperature, curvature and growth rate of wafers